Migration processes of the 30° partial dislocation in silicon

Physical Review Letters

Volumn 93, Issue 19, 2004, Pages

  Oyama, Norihisa ^a   Ohno, Takahisa ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BINDING ENERGY; CRYSTAL DEFECTS; HIGH RESOLUTION ELECTRON MICROSCOPY; MATHEMATICAL MODELS; MOLECULAR STRUCTURE; PARAMETER ESTIMATION; PLASTIC DEFORMATION; QUANTUM THEORY; SEMICONDUCTOR MATERIALS; SOLITONS; STRESSES; VECTORS;

CRYSTAL PERIODS; PARTIAL DISLOCATION; PEIERLS BARRIERS; TOPOLOGICAL DEFECTS;

SILICON;

EID: 19744370981     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.195502     Document Type: Article

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