Optical characteristics of MBE grown GaMnAs embedded with MnAs clusters

Applied Surface Science

Volumn 253, Issue 2, 2006, Pages 515-518

  Parchinskiy, P B ^a,b   Yu, Fu Cheng ^a   Jeong, Se Young ^a   Gao, Cunxu ^a   Kim, Dojin ^a   Kim, Hyojin ^a   Ihm, Young Eon ^a  

^a Chungnam National University   (South Korea)

^b NATIONAL UNIVERSITY OF UZBEKISTAN   (Uzbekistan)

Author keywords

GaMnAs; MnAs cluster; Photoluminescence

Indexed keywords

DEFECTS; ELECTRON ENERGY LEVELS; ENERGY GAP; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; PHOTOLUMINESCENCE;

BAND GAP; GAMNAS; MNAS CLUSTERS; SEMICONDUCTING MATRIX;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33845444363     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.12.099     Document Type: Article

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