Spin disorder scattering mechanism of ferromagnetic Ga1-xMn xAs layers on (100) GaAs substrates

Journal of Applied Physics

Volumn 95, Issue 7, 2004, Pages 3607-3611

  Yoon, I T ^a   Kang, T W ^a   Kim, K H ^b   Kim, D J ^b  

^a Dongguk University   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; FERROMAGNETIC MATERIALS; HALL EFFECT; IONIZATION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PARAMAGNETIC MATERIALS; PERTURBATION TECHNIQUES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAMPLING; SCANNING ELECTRON MICROSCOPY; SEGREGATION (METALLOGRAPHY);

DILUTED MAGNETIC SEMICONDUCTORS (DMS); SPIN DISORDERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1942478629     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1655679     Document Type: Article

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