Properties of manganese-doped gallium arsenide layers grown by liquid-phase epitaxy from a bismuth melt

Semiconductors

Volumn 32, Issue 7, 1998, Pages 704-710

  Zhuravlev, K S ^a   Shamirzaev, T S ^a   Yakusheva, N A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040634936     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187488     Document Type: Article

References (33)

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