Origin of the substrate current after soft-breakdown in thin oxide n-MOSFETs

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 1999, Pages 77-80

  Crupi, F ^a   Iannaccone, G ^a   Neri, B ^a   Crupi, I ^a   Degraeve, R ^a   Groeseneken, G ^a   Maes, H E ^a  

^a Dipartimento di Ingegneria   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC SPACE CHARGE; ELECTRON TRAPS; ELECTRON TUNNELING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; SILICA;

SOFT BREAKDOWN (SBD);

MOSFET DEVICES;

EID: 0033285235     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ipfa.1999.791309     Document Type: Conference Paper

References (9)