Methods of high-energy chemistry in the technology of wide-gap chalcogenide semiconductors

Inorganic Materials

Volumn 40, Issue SUPPL. 1, 2004, Pages

  Georgobiani, A N ^a   Kotlyarevsky, M B ^b   Rogozin, I V ^c  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^b Azov Reg Institute of Management   (Ukraine)

^c BERDYANSK STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGEN; METAL; NONMETAL; ORGANIC COMPOUND;

ARTICLE; CHEMICAL STRUCTURE; CRYSTAL; DIFFUSION; ENERGY; EXCITATION; GROWTH; MATERIALS; MOLECULE; SEMICONDUCTOR; TECHNOLOGY; TEMPERATURE; VAPOR;

EID: 7044224795     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:INMA.0000036325.88593.d7     Document Type: Article

References (52)

1. Georgobiani, A.N., Kotlyarevsky, M.B., Mikhalenko, V.N., et al., USSR Inventor's Certificate no. 684 810, 1977.
2. Takafumi Yao and Toshihiko Takeda, Growth Process in Atomic Layer Epitaxy of Zn Chalcogenide Single Crystalline Films on (100) GaAs, Appl. Phys. Lett., 1986, vol. 48, pp. 160-162.
3. Kröger, F.A., The Chemistry of Imperfect Crystals, Amsterdam: North Holland, 1964. Translated under the title Khimiya nesovershennykh kristallov, Moscow: Mir, 1969.
4. Kröger, F.A., The Chemistry of Imperfect Crystals, Amsterdam: North Holland, 1964. Translated under the title Khimiya nesovershennykh kristallov, Moscow: Mir, 1969.
5. Morozova, N.K. and Morozova, O.M., Diagram of Point-Defect Equilibria and Deviations from Stoichiometry in Zinc Sulfide, Izv. Akad. Nauk SSSR, Neorg. Mater., 1981, vol. 17, no. 8, pp. 1335-1340.
6. Nyges, M.T., Thermodynamic Aspects of Point Defects in Zinc Selenide Single Crystals, Cand. Sci. (Phys.-Math.) Dissertation, Tallinn, 1974.
7. Gurvich, A.M., Vvedenie v fizicheskuyu khimiyu kristallofosforov (Introduction to the Physical Chemistry of Phosphor Crystals), Moscow: Vysshaya Shkola, 1982.
8. Nikitenko, V.A., Stenli, S.A., and Morozova, N.K., Diagrams of Native-Point-Defect Equilibria and Deviations from Stoichiometry in Zinc Oxide, Izv. Akad. Nauk SSSR, Neorg. Mater., 1988, vol. 24, no. 11, pp. 1830-1835.
9. Mikhalenko, V.N., Dement'ev, B.P., Kotlyarevsky, M.B., and Georgobiani, A.N., Low-Temperature Equilibrium Limit on the Compensation of Native-Defect Hole Conduction in Zinc Sulfide, Izv. Vyssh. Uchebn. Zaved., Fiz., 1978, no. 8, pp. 150-152.
10. Georgobiani, A.N., Kotlyarevsky, M.B., and Mikhalenko, V.N., Defect Structure in Native-Defect p-Type ZnS, Izv. Akad. Nauk SSSR, Neorg. Mater., 1981, vol. 17, no. 8, pp. 1329-1334.
11. Georgobiani, A.N., Kotlyarevsky, M.B., and Mikhalenko, V.N., Native-Defect Luminescence Centers in p-Type ZnS, Tr. Fiz. Inst. im. P. N. Lebedeva, Akad. Nauk. SSSR, 1983, vol. 138, pp. 79-135.
12. Vinetskii, V.L. and Kholodar', G.A., Statisticheskoe vzaimodeistvie elektronov i defektov v poluprovodnikakh (Random Electron-Defect Interactions in Semiconductors), Kiev: Naukova Dumka, 1969.
13. Georgobiani, A.N. and Kotlyarevsky, M.B., Ion Implantation of Zinc Sulfide, Radiat. Eff., 1980, vol. 47, pp. 21-26.
14. Georgobiani, A.N., Kotlyarevsky, M.B., and Mikhalenko, V.N., Defect Equilibria in ZnS in Contact with Gold, Kratk. Soobshch. Fiz., 1977, no. 4, pp. 14-18.
15. Georgobiani, A.N., Kotlyarevsky, M.B., Lastovka, V.V., and Noskov, D.A., Preparation of p-Type ZnSe via Arsenic Ion Implantation, Kratk. Soobshch. Fiz., 1977, no. 6, pp. 30-33.
16. Georgobiani, A.N., Kotlyarevsky, M.B., and Mikhalenko, V.N., Kinetics of Neutral and Charged Defect Formation in II-VI Compounds in Equilibrium with Non-metal Vapor, Izv. Akad. Nauk SSSR, Neorg. Mater., 1982, vol. 18, no. 1, pp. 12-17.
17. Zhu, Z., Nomura, T., Miyo, M., and Hagino, M., MBE Growth Mechanisms of ZnSe: Flux and Substrate Temperature, J. Cryst. Growth, 1989, vol. 95, pp. 529-532.
18. 6 (Current Topics in the Physics of II-VI Compounds), Vilnius: Vil'nyus. Gos. Univ., 1972.
19. Mikhalenko, V.N., Kotlyarevsky, M.B., Georgobiani, A.N., and Sokolov, V.A., Mechanism of Defect Formation in p-Type Zinc Sulfide Annealed in Sulfur Vapor, Zh. Fiz. Khim., 1980, vol. 54, pp. 345-348.
20. Georgobiani, A.N. and Kotlyarevsky, M.B., Kinetics of Intrinsic-Defect Formation in II-VI Single Crystals in Equilibrium with Nonmetal Vapor, Izv. Akad. Nauk SSSR, Neorg. Mater., 1981, vol. 17, no. 7, pp. 1153-1158.
21. Georgobiani, A.N., Kotlyarevsky, M.B., Pegov, A.A., and Chernyavskii, B.G., A Model for Native-Defect Edge Emission Centers in Zinc Selenide, Izv. Vyssh. Uchebn. Zaved., Fiz., 1986, no. 10, pp. 105-107.
22. Pegov, A.A., Structure of Acceptor Centers in Undoped p-Type Zinc Selenide, Cand. Sci. (Phys.-Math.) Dissertation, Tomsk, 1986.
23. Kotlyarevsky, M.B., Leont'eva, O.P., and Pegov, A.A., Zero Radius Potential Calculations of the Energy Levels of Native-Defect Acceptor Complexes in Zinc Selenide, III Vsesoyuznoe soveshchanie po fizike i tekhnologii shirokozonnykh poluprovodnikov (III All-Union Conf. on the Physics and Technology of Wide-Gap Semiconductors), Makhachkala, 1986, p. 129.
24. Kotlyarevsky, M.B., Georgobiani, A.N., Rogozin, I.V., and Marakhovskii, A.V., Luminescence of Oxygen-Enriched ZnO, Zh. Prikl. Spektrosk., 2003, vol. 70, no. 1-3, pp. 86-89.
25. Butkhuzi, T.V., Bureyev, A.V., Georgobiani, A.N., et al., Optical and Electrical Properties of Radical Beam Gettering Epitaxy Grown n- and p-Type ZnO Single Crystals, J. Cryst. Growth, 1992, vol. 117, pp. 366-369.
26. VI (Physics of II-VI Compounds), Georgobiani, A.N. and Sheikman, M.K., Eds., Moscow: Nauka, 1986, pp. 80-83.
27. Georgobiani, A.N., Kotlyarevsky, M.B., and Rogozin, I.V., Phase Content and Photoluminescence of ZnO Layers Obtained on ZnSe Substrates by Radical-Beam Gettering Epitaxy, Nucl. Phys. B, 1999, vol. 78, pp. 484-487.
28. Takafumi Yao and Yasumasa Okada, Phosphorus Acceptor Levels in ZnSe Grown by Molecular Beam Epitaxy, J. Appl. Phys., 1986, vol. 25, pp. 821-827.
29. Nakahara, K., Tanabe, T., Takasu, H., et al., Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy, Jpn. J. Appl. Phys., 2001, vol. 40, pp. 250-254.
30. Naoki Ohashi, Tomokazu Nakata, Takashi Sekiguchi, et al., Yellow Emission from Zinc Oxide Giving an Electron Spin Resonance Signal at g = 1.96, Jpn. J. Appl. Phys., 1999, vol. 38, pp. 113-115.
31. Reynolds, D.C., Look, D.C., Jogai, B., et al., Valence-Band Ordering in ZnO, Phys. Rev. B: Condens. Matter, 1999, vol. 60, pp. 2340-2345.
32. Georgobiani, A.N., Kotlyarevsky, M.B., Kidalov, V.V., and Rogozin, I.V., ZnO/ZnSe Structures Prepared by Radical-Beam Getter Epitaxy, Neorg. Mater., 1997, vol. 33, no. 2, pp. 232-235 [Inorg. Mater. (Engl. Transl.), vol. 33, no. 2, pp. 185-188].
33. Georgobiani, A.N., Kotlyarevsky, M.B., Kidalov, V.V., and Rogozin, I.V., ZnO/ZnSe Structures Prepared by Radical-Beam Getter Epitaxy, Neorg. Mater., 1997, vol. 33, no. 2, pp. 232-235 [Inorg. Mater. (Engl. Transl.), vol. 33, no. 2, pp. 185-188].
34. Shigeo Fujita, Akira Tanabe, Takao Sakamoto, et al., Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSe, Jpn. J. Appl. Phys., 1987, vol. 26, pp. L2000-L2002.
35. Kitagawa, M., Tomomura, Y., Nakanishi, K., et al., Photo-Assisted Homoepitaxial Growth of ZnS by Molecular Beam Epitaxy, J. Cryst. Growth, 1990, vol. 101, pp. 52-55.
36. Matsumura, N., Fukada, T., Senga, K., et al., PhotoAssisted MBE Growth of ZnSe on GaAs Substrates, J. Cryst. Growth, 1991, vol. 111, pp. 787-791.
37. Matsumura, N., Senga, K., Kakuta, J., et al., Study on the Behavior of Surface Adatoms during Photoassisted MBE of ZnSe and Improvement of Surface Morphology, J. Cryst. Growth, 1991, vol. 115, pp. 279-283.
38. Fujita, S., Hirata, S., and Fujita, S., Investigation of Photo-Induced Surface Reactions by Mass Analysis in OMVPE of II-VI Semiconductors, J. Cryst. Growth, 1991, vol. 115, pp. 269-273.
39. Sakurai, F., Suto, K., Oyama, Y., and Nishizawa, J., n-Type ZnSe Crystal Growth by MOVPE Under Atmospheric Pressure with UV Irradiation on Stoichiometry-Controlled p-Type ZnSe Crystals, J. Cryst. Growth, vol. 214/215, pp. 537-541.
40. Kazuhiro Ohkawa, Takeshi Karasawa, and Tsuneo Mitsuyu, Characteristics of p-Type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping, Jpn. J. Appl. Phys., 1991, vol. 30, pp. L152-L155.
41. Nishizawa, J., Itoh, K., Okuno, Y., and Sakurai, F., Blue Light Emission ZnSe p-n Junctions, J. Appl. Phys., 1985, vol. 57, pp. 2210-2216.
42. Park, R.M., Mar, H.A., and Salansky, N.M., Photoluminescence Properties of Nitrogen-Doped ZnSe Grown by Molecular Beam Epitaxy, J. Appl. Phys., 1985, vol. 58, pp. 1047-1049.
43. Matsumoto, S., Tosaka, H., Yoshida, T., et al., Nitrogen Doping of ZnSe and ZnCdSe with the Assistance of Thermal Energy and Photon Energy, Jpn. J. Appl. Phys., 1993, vol. 33, pp. 731-735.
44. Park, R.M., Troffer, M.B., Rouleau, C.M., et al., p-Type ZnSe by Nitrogen Atom Beam Doping during Molecular Beam Epitaxy Growth, Appl. Phys. Lett., 1990, vol. 57, pp. 2127-2129.
45. Kimura, K., Miwa, S., Jin, C.G., et al., Atomic Nitrogen Doping in p-ZnSe with High Activation Ratio Using a High-Power Plasma Source, J. Cryst. Growth, 1998, vol. 184/185, pp. 411-414.
46. Ogata, K.-I., Kawaguchi, D., Nishiyama, N., et al., Effects of Annealing Atmosphere and Temperature on Acceptor Activation in ZnSe:N Grown by Photoassisted MOVPE, J. Cryst. Growth, 1996, vol. 159, pp. 312-316.
47. Ahmed, M.U., Prete, P., Irvine, S.J., et al., Mechanism for Photo-Assisted MOVPE Nitrogen Doping of ZnSe, J. Cryst. Growth, 1998, vol. 184/185, pp. 429-434.
48. Gunshor, R.L., Han, J., Hua, G.C., et al., Growth Issues for Blue-Green Laser Diodes, J. Cryst. Growth, 1996, vol. 159, pp. 1-10.
49. Ishibashi, A., II-VI Blue-Green Light Emitters, J. Cryst. Growth, 1996, vol. 159, pp. 555-565.
50. Hommel, D., Behr, T., Kurtz, E., et al., On the Growth and Doping of Blue-Green Emitting ZnSe Laser Diodes, J. Cryst. Growth, 1996, vol. 159, pp. 566-572.
51. Toda, A., Nakamura, F., Yanashima, K., and Ishibashi, A., Blue-Green Laser Diode Grown by Photo-Assisted MOCVD, J. Cryst. Growth, 1997, vol. 170, pp. 461-466.
52. Ogata, K.-I., Kawaguchi, D., Nishiyama, N., et al., Fabrication of ZnSe-Based Laser Diode Structures by Photoassisted MOVPE, J. Cryst. Growth, 1998, vol. 184/185, pp. 554-557.