Surface confinement of the InN-rich phase in thick InGaN on GaN

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 545-550

  Kim, Taek Seung ^a   Kim, Sang Woo ^b   Kim, Han Ki ^b   Lee, Ji Myon ^a  

^a Sunchon National University   (South Korea)

^b Kumoh National Institute of Technology   (South Korea)

Author keywords

Depth profiling; Etching; InN rich phase; Photoluminescence

Indexed keywords

GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; PHOTOLUMINESCENCE; PLASMA ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE TREATMENT;

DEPTH PROFILING; INN RICH PHASE; SURFACE CONFINEMENT;

THIN FILMS;

EID: 33845233561     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.08.003     Document Type: Article

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