p-InGaN/n-GaN heterojunction diodes and their application to heterojunction bipolar transistors

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Makimoto, Toshiki ^a   Kumakura, Kazuhide ^a   Nishida, Toshio ^a   Kobayashi, Naoki ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES;

CAPACITANCE-VOLTAGE MEASUREMENTS; HOLE CONFINEMENT; INDIUM GALLIUM NITRIDE; MOLE FRACTION; RECTIFIED CURRENT-VOLTAGE CHARACTERISTICS; VALENCE BAND;

HETEROJUNCTIONS;

EID: 0035559937     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)