AlN/GaN and AlGaN/GaN heterostructures grown by HVPE on SiC substrates

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 245-249

  Melnik, Yu V ^a   Nikolaev, A E ^a   Stepanov, S I ^a   Zubrilov, A S ^a   Nikitina, I P ^a   Vassilevski, K V ^a   Tsvetkov, D V ^a   Babanin, A I ^a   Musikhin, Yu G ^a   Tretyakov, V V ^a   Dmitriev, V A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CATHODOLUMINESCENCE; ELECTRIC VARIABLES MEASUREMENT; HYDRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

HETEROJUNCTIONS;

EID: 0031364036     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)