HVPE GaN and AIGaN "substrates" for homoepitaxy

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1121-1124

  Melnik, Yu ^a,b   Nikolaev, A ^a   Stepanov, S ^a   Kikitina, I ^a   Vassilevski, K ^a   Ankudinov, A ^a   Musikhin, Yu ^a   Dmitriev, V ^a,c,d  

^a IOFFE INSTITUTE   (Russian Federation)

^b Crystal Growth Research Center   (Russian Federation)

^c TDI Inc   (United States)

^d HOWARD UNIVERSITY   (United States)

Author keywords

Bulk Crystals; Epitaxy; HVPE; Strain; Substrates; Surface; X Ray Diffraction

Indexed keywords

DRY ETCHING; ELECTRIC PROPERTIES; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; STRAIN; SUBSTRATES; SURFACE STRUCTURE; VAPOR PHASE EPITAXY;

HOMOEPITAXY; HYDRIDE VAPOR PHASE EPITAXY (HVPE); SEMICONDUCTING GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 11644314374     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1121     Document Type: Article

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