Atomic displacement free interfaces and atomic registry in SiO 2/(1×1) Si(100)

Journal of Applied Physics

Volumn 100, Issue 10, 2006, Pages

  Shaw, Justin M ^a,c   Herbots, N ^a   Hurst, Q B ^a,d   Bradley, D ^a   Culbertson, R J ^a   Atluri, V ^a   Queeney, K T ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b SMITH COLLEGE   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL PHASES; INTERFACIAL STRUCTURAL DISORDER; ION BEAM ANALYSIS; SILICON SUBSTRATES;

ATOMIC PHYSICS; FILM GROWTH; INTERFACES (MATERIALS); ION BEAMS; PHASE TRANSITIONS; THIN FILMS;

SILICA;

EID: 33845220032     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2358835     Document Type: Article

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