Electromagnetic modeling of micromachined GaN thin films for FBAR applications

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 2005, Pages 119-122

  Neculoiu, D ^a   Konstantinidis, G ^b   Mutamba, K ^c   Takacs, A ^a   Vasilache, D ^a   Sydlo, C ^c   Kostopoulos, T ^b   Stavrinidis, A ^b   Muller A ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Electromagnetic modelling; FBAR; Piezoelectric material parameter extraction

Indexed keywords

FREQUENCIES; GALLIUM COMPOUNDS; MAGNETOELECTRIC EFFECTS; MICROMACHINING; MICROWAVE MEASUREMENT; PERMITTIVITY; PIEZOELECTRIC DEVICES;

ELECTROMAGNETIC MODELLING; ELECTROMAGNETIC SIMULATORS; FBAR APPLICATIONS; PARAMETER EXTRACTION;

THIN FILMS;

EID: 33751520446     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMICND.2005.1558725     Document Type: Conference Paper

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