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Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 300-305

The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer

(5) Gloux, F a Ruterana, P a Wojtowicz, T a Lorenz, K b Alves, E b

a UNIVERSITÉ DE CAEN (France)

b INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; ION IMPLANTATION; POINT DEFECTS; RARE EARTH ADDITIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

CAPPING LAYERS; DAMAGE FORMATION; NANOCRYSTALLINE LAYER ( NL); POINT DEFECT CLUSTERS; PRISMATIC PLANES;

GALLIUM NITRIDE;

EID: 33845188597 PISSN: 07496036 EISSN: 10963677 Source Type: Journal
DOI: 10.1016/j.spmi.2006.07.016 Document Type: Article

Times cited : (4)

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