Lattice expansion induced by Zn channeled implantation in GaN

Materials Science in Semiconductor Processing

Volumn 5, Issue 6, 2002, Pages 511-514

  Ding, F R ^a,b   He, W H ^b   Vantomme, A ^a   Zhao, Q ^a   Pipeleers, B ^a   Jacobs, K ^c   Moerman, I ^b  

^a KU LEUVEN   (Belgium)

^b PEKING UNIVERSITY   (China)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

Broken crystals; Channeled implantation; GaN; Lattice expansion; XTEM

Indexed keywords

LATTICE CONSTANTS; NANOSTRUCTURED MATERIALS; POINT DEFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC;

CHANNELED IMPLANTATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0038079377     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00070-7     Document Type: Article

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