The atomic structure of defects formed during doping of GaN with rare earth ions

Physica Status Solidi C: Conferences

Volumn 2, Issue 3, 2005, Pages 1081-1084

  Wojtowicz, T ^a   Ruterana, P ^a   Lorenz, K ^b   Wahl, U ^b   Alves, E ^b   Ruffenach, S ^c   Halambalakis, G ^c   Briot, O ^c  

^a UNIVERSITÉ DE CAEN   (France)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DOPING (ADDITIVES); GALLIUM NITRIDE; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; RARE EARTH ADDITIONS;

ATOMIC RESOLUTION; MOCVD SUBSTRATES; RARE EARTH IONS; TYPICAL STACKING FAULTS (SFS);

CRYSTAL ATOMIC STRUCTURE;

EID: 27344432964     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460625     Document Type: Conference Paper

References (6)

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6. T. Wojtowicz and A. Steckl, presented at IWN conference, 18-23 July 2004, Pittsburgh 2004, submitted for publication in the proceedings.