Characterization and modeling of Al 2O 3 MIM capacitors: Temperature and electrical field effects

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 265-268

  Becu S ^a,b   Cremer S ^a   Noblanc, O ^a   Autran, J L ^b,c   Delpech, P ^a  

^a STMICROELECTRONICS   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c INSTITUT UNIVERSITAIRE DE FRANCE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

METAL-INSULATOR-METAL (MIM) STRUCTURES; MIM CAPACITORS; POLAR MOLECULES;

ALUMINA; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC FIELDS; MATHEMATICAL MODELS; THERMAL EFFECTS;

CAPACITORS;

EID: 33751399435     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546636     Document Type: Conference Paper

References (9)

1. T. Remmel et al., Reliability of silicon nitride dielectric-based metal-insulator-metal capacitors, International Reliability Physics Symposium, Proceedings, pages 573-574, IEEE, April 2004.
2. 5, Proceedings of the 2003 Bipolar/BiCMOS Circuits and Technology Meeting, pages 35-38, September 2003.
3. 2 dielectrics, IEEE Electron Device Letters, vol. 23, (9), pages 514-516, September 2002.
4. th Workshop On Dielectrics In Microelectronics 2002, Proceedings, pages 73-76, 2002.
5. 5 films, Journal of Applied Physics, vol. 90, (3), pages 1501-1508, 2001.
6. 2 MOM capacitors: a unified understanding and prediction, International Electron Devices Meeting, Technical Digest, pages 879-882, IEEE, December 2003.
7. E. Deloffre et al., Electrical properties in low temperature range (5 K-300 K) of tantalum oxide dielectric MIM capacitors, Microelectronics and Reliability, vol. 45, issues 5-6, pages 925-928, May-June 2004.
8. R. Coelho, B. Aladenize, Les diélectriques: proprié tés diélectriques des matériaux isolants, Editions Hermès, Paris, pages 131-135, 1993.
9. J. W. Mac Pherson et al., Trends in the ultimate breakdown strength of high dielectric-constant materials, IEEE Transactions on Electron Devices, vol. 50, (8), pages 1771-1778, August 2003.