Reliability of silicon nitride dielectric-based metal-insulator-metal capacitors

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 573-574

  Remmel, Thomas ^a   Ramprasad, Rampi ^b   Roberts, Doug ^b   Raymond, Mark ^b   Martin, Matthew ^a   Qualls, Douglas ^a   Luckowski, Eric ^b   Braithwaite, Sharanda ^b   Miller, Mel ^b   Walls, James ^a  

^a MOTOROLA INC   (United States)

^b NONE   (United States)

Author keywords

MIM capacitor; Reliability; Silicon nitride; TDDB; Voltage acceleration model; Wafer scale

Indexed keywords

CAPACITANCE; DATA REDUCTION; DIELECTRIC MATERIALS; ELECTRONICS PACKAGING; EXTRAPOLATION; MIM DEVICES; RELIABILITY; SILICON NITRIDE; SILICON WAFERS; STATISTICAL METHODS;

CAPACITANCE DENSITY; RELIABILITY ASSESSMENT;

CAPACITORS;

EID: 3042561376     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. P. Zurcher et al. "Integration of Thin Film MM Capacitors and Resistors into Copper Metallization based KF-CMOS and Bi-CMOS Technologies," in IEDM Tech. Dig., 2000, pp. 153-156.
2. J. W. McPherson et al, "Trends in the Ultimate Breakdown Strength of High Dielectric-Constant Materials", IEEE Trans. Electron Devices, 50, 2003, pp. 1771-1778.
3. J. Scarpulla et al., "A TDDB model of Si3N4-based Capacitors in GaAs MMICs," in Proc. IEEE Int. Rel. Phys. Symposium, 1999, pp. 128-137.
4. K.-H. Allers et al., "Reliability of Metal Insulator Metal Capacitors (MIMCAP)", in Advanced Metallization Conf., Montreal, QC, Canada, 2001, pp. 447-456.
5. I. C. Chen et al, "Substrate Hole Current and Oxide Breakdown", Appl. Phys. Lett. 49, 1986, pp. 669-671.
6. R. J. Bolam et al, "Electrical Characterstics and Reliability of UV Transparent Si3N4 Metal-Insulatoir-Metal (MIM) Capacitors", IEEE Trans. Electron Devices, 50, 2003, pp. 941-944.