Plasma implanted ultra shallow junction boron depth profiles: Effect of plasma chemistry and sheath conditions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 1, 2006, Pages 489-493

  Walther, Steve ^a   Godet, Ludovic ^a   Büyüklimanli, Temel ^b   Weeman, John ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^b Evans East Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH PROFILES; PLASMA CHEMISTRY; PLASMA IONS;

BORON; ION IMPLANTATION; PLASMAS; SECONDARY ION MASS SPECTROMETRY;

SEMICONDUCTOR JUNCTIONS;

EID: 31544467871     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2137336     Document Type: Article

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