Boron distribution in silicon after excimer laser annealing with multiple pulses

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 228-231

  Monakhov, E V ^a   Svensson, B G ^a   Linnarsson, M K ^b   La Magna, A ^c   Italia, M ^c   Privitera, V ^c   Fortunato, G ^d   Cuscuna M ^d   Mariucci, L ^d  

^a UNIVERSITY OF OSLO   (Norway)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c CNR IMM   (Italy)

^d IFN CNR   (Italy)

Author keywords

Boron; ELA; Silicon

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; EXCIMER LASERS; IONS; LASER PULSES; MELTING; PARAMETER ESTIMATION; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

EXCIMER LASER ANNEALING (ELA); IMPLANTATION PARAMETERS; MELT DEPTH; STRUCTURAL DEFECTS;

BORON;

EID: 27844450980     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.058     Document Type: Conference Paper

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