Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy

Acta Materialia

Volumn 55, Issue 1, 2007, Pages 183-187

  Wang, J B ^a,b   Li, Z F ^b   Chen, P P ^b   Lu, Wei ^b   Yao, T ^c  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

InN; Lattice disorder; Raman scattering

Indexed keywords

CORRELATION METHODS; CRYSTAL DEFECTS; CRYSTAL LATTICES; FILMS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING;

CORRELATION MODELS; INDIUM NITRIDE; LATTICE DISORDER; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

INDIUM COMPOUNDS;

EID: 33751393691     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2006.07.031     Document Type: Article

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