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Applied Physics Letters

Volumn 86, Issue 21, 2005, Pages 1-3

AlGaN films grown on (0001) sapphire by a two-step method

(4) Shih, C F a Chen, N C b Lin, S Y c Liu, K S a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b CHANG GUNG UNIVERSITY (Taiwan)

c NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DECOMPOSITION; FILM GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLIC FILMS; RECRYSTALLIZATION (METALLURGY); SAPPHIRE; STRAIN; TENSILE STRENGTH;

CRYSTAL QUALITY; LATTICE MISMATCH; TWO-STEP METHODS; WIDE-BAND-GAP;

ALUMINUM COMPOUNDS;

EID: 20844433841 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1931058 Document Type: Article

Times cited : (32)

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