Evaluation of surface-potential-based bulk-charge compact MOS transistor model

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1787-1794

  Jie, Bin B ^a   Sah, Chih Tang ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

Compact model; Drain current equation; Drift diffusion; Metal oxide semiconductor (MOS) transistor; Space charge limited

Indexed keywords

APPROXIMATION THEORY; ELECTRIC SPACE CHARGE; INTEGRAL EQUATIONS; POISSON EQUATION; SEMICONDUCTOR DEVICE MODELS;

COMPACT MODEL; DRAIN CURRENT EQUATION; DRIFT-DIFFUSION;

MOSFET DEVICES;

EID: 23344432414     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.851833     Document Type: Article

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