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Volumn 83, Issue 11-12, 2006, Pages 2264-2267
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Redistribution of arsenic during the reaction of nickel thin films with silicon at relatively high temperature: Role of agglomeration
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Author keywords
Dopant; Nickel; Silicide; SIMS
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Indexed keywords
CONCENTRATION (PROCESS);
HEAT TREATMENT;
NICKEL COMPOUNDS;
REACTION KINETICS;
SILICON;
THIN FILMS;
X RAY ANALYSIS;
MONOSILICIDE (NISI);
NICKEL THIN FILMS;
SILICIDE;
X-RAY REFLECTIVITY (XRR);
ARSENIC;
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EID: 33751232367
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2006.10.016 Document Type: Article |
Times cited : (9)
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References (15)
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