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Volumn 83, Issue 11-12, 2006, Pages 2264-2267

Redistribution of arsenic during the reaction of nickel thin films with silicon at relatively high temperature: Role of agglomeration

Author keywords

Dopant; Nickel; Silicide; SIMS

Indexed keywords

CONCENTRATION (PROCESS); HEAT TREATMENT; NICKEL COMPOUNDS; REACTION KINETICS; SILICON; THIN FILMS; X RAY ANALYSIS;

EID: 33751232367     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.016     Document Type: Article
Times cited : (9)

References (15)
  • 9
    • 33845921506 scopus 로고
    • Gao Y. J. Appl. Phys. 64 7 (1988) 3760-3762
    • (1988) J. Appl. Phys. , vol.64 , Issue.7 , pp. 3760-3762
    • Gao, Y.1
  • 12
    • 3543078809 scopus 로고    scopus 로고
    • Y.-L. Jiang, A. Agarwal, G.-P. Ru, X.-P. Qu, B.-Z. Li, in: Proceedings of the Fourth International Workshop on Junction Technology (IWJT-2004) (2004) 139-142.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.