Dopant redistribution induced by Ni silicidation at 300°C

Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Volumn 4, Issue , 2004, Pages 139-142

  Jiang, Yu Long ^a,b   Agarwal, Aditya ^a   Ru, Guo Ping ^b   Qu, Xin Ping ^b   Li, Bing Zong ^b  

^a AXCELIS TECHNOLOGIES   (United States)

^b FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIODES; INTERFACES (MATERIALS); NICKEL; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

DOPANT INTERACTION; SILICIDATION; VOID LAYER FORMATION;

SEMICONDUCTOR DOPING;

EID: 3543078809     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Conference Paper

References (15)

1. S. P. Murarka, J. Vac. Sci. Technol., vol. 17, 775 (1980).
2. J. P. Gambino, and E. G. Colgan, Mater. Chem. Phys., vol. 52, 99 (1998).
3. K. Maex, G. Ghosh, L. Delaey, V. Probst. P. Lippens. L. Van den Hove and R.F. DeKeersmaecker, J. Mater. Res., 4 (1989) 1209.
4. S.P. Murarka and D.S. Williams, J. Vac. Sci. Technol. B5 (1987) 1674.
5. C.-D. Lien and M.-A. Nicolet, J. Vac. Sci. Technoi., B2 (1954) 738.
6. T. Morimoto, T. Ohguro, H. S. Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsmata, and H. Iwai, IEEE Trans. Electron Devices, vol. 42, 915 (1995).
7. A. Lauwers, A. Steegen, M. d. Potter, R. Lindsay, A. Satta, H. Bender, and K. Maex, J. Vac. Sci. Technol. B, vol. 19, 2026 (2001).
8. J. P. Lu, D. Miles, J. Zhao, A. Gurba, Y. Xu, C. Lin, M. Hewson, J. Ruan, L. Tsung, R. Kuan, T. Grider, D. Mercer, and C. Montgomery, in IEDM Tech. Dig., 2002, 371 (2002).
9. Y. -L. Jiang, G. -P. Ru, W. Huang, X. -P. Qu, A. Agarwal, J. Poate, B. -Z. Li, and R L V. Meirhaeghe, (submitted paper)
10. M. Wittmer and K.N. Tu. Phys. Rev. B, 29 (1984) 2010.
11. S.L. Hsia, T.Y. Tan, P.L. Smith and G.E. McGuire, in R.W.Fathauer, S. Mantl, L.J. Schowalter and K.M. Tu (eds.), Silicides, Germanides, and Their Interfaces, Vol. 320, Materials Research Soc., Pittsburgh, PA, 1994. p. 409.
12. A .D. Smigelkas, E.O. Kirkendall, Trans, AIME 171, 130 (1947).
13. P.Gas and F.M. d'Heurle, in Properties of Metal Suicides, edited by K. Maex and M. van Rossum, (Eds., INSPEC, London, 1995), p. 279
14. M. Östling et.al., Basic physical properties, in Properties of Metal Suicides, edited by K. Maex and M. van Rossum, (Eds., INSPEC, London, 1995), p. 1-52. S. Pramanick, Yu. N. Erokhin, B. K. Patnaik, and G. A. Rozgonyi, Appl. Phys. Lett. 63 (14), 1933 (1993).
15. M. Östling et.al., Basic physical properties, in Properties of Metal Suicides, edited by K. Maex and M. van Rossum, (Eds., INSPEC, London, 1995), p. 1-52. S. Pramanick, Yu. N. Erokhin, B. K. Patnaik, and G. A. Rozgonyi, Appl. Phys. Lett. 63 (14), 1933 (1993).