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Volumn 76, Issue 2, 2007, Pages 285-290

Positron annihilation induced Auger and gamma spectroscopies of surfaces

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRON TRAPS; GAMMA RAY SPECTROMETERS; POSITRONS;

EID: 33751175646     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.radphyschem.2006.03.053     Document Type: Article
Times cited : (9)

References (17)
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  • 7
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    • Fazleev N.G., Fry J.L., and Weiss A.H. Surface states and annihilation characteristics of positrons trapped at the (1 0 0) and (1 1 1) surfaces of silicon. Phys. Rev. B. 70 (2004) 165309
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  • 8
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    • The effect of adsorbed hydrogen on the growth of ultrathin Si films on Ge(1 0 0) studied by positron-annihilation-induced Auger electron spectroscopy (PAES)
    • Kim J.H., and Weiss A.H. The effect of adsorbed hydrogen on the growth of ultrathin Si films on Ge(1 0 0) studied by positron-annihilation-induced Auger electron spectroscopy (PAES). Surf. Sci. 460 (2000) 129-135
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.