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Volumn 460, Issue 1-3, 2000, Pages 129-135

The effect of adsorbed atomic hydrogen on the growth of ultrathin silicon films on Ge(100) studied by positron-annihilation-induced Auger electron spectroscopy (PAES)

(2) Kim, J H a Weiss, A H b

a INST OF PHYS AND CHEMICAL RESEARCH (Japan)

b UNIVERSITY OF TEXAS AT ARLINGTON (United States)

Author keywords

Auger electron spectroscopy; Germanium; Growth; Hydrogen; Polycrystalline thin films; Positron solid interactions; Silicon

Indexed keywords

EID: 0347109717 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(00)00524-0 Document Type: Article

Times cited : (2)

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