Positrons as probes of Si(100) surface with adsorbed hydrogen and oxygen

Radiation Physics and Chemistry

Volumn 58, Issue 5-6, 2000, Pages 659-665

  Fazleev, N G ^a,b   Fry, J L ^a   Weiss, A H ^a  

^a UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

^b KAZAN STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; AUGER ELECTRON SPECTROSCOPY; BINDING ENERGY; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; HYDROGEN; OXYGEN; POSITRONS; SEMICONDUCTING SILICON;

POSITRON ANNIHILATION; POSITRON WORK FUNCTION;

ELECTRON BEAMS;

HYDROGEN; OXYGEN; SILICON DIOXIDE;

ADSORPTION; CALCULATION; CONFERENCE PAPER; DESTRUCTION; ENERGY; MOLECULAR INTERACTION; POSITRON; PROBABILITY; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 0034212827     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0969-806X(00)00234-6     Document Type: Conference Paper

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