Surface states and annihilation characteristics of positrons trapped at the (100) and (111) surfaces of silicon [57]

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 16, 2004, Pages 1-17

  Fazleev, N G ^a,b   Fry, J L ^a   Weiss, A H ^a  

^a UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

^b KAZAN STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DIMER; SILICON;

ANISOTROPY; ARTICLE; AUGER ELECTRON SPECTROSCOPY; CRYSTAL; DENSITY; ELECTRON; ENERGY; MATHEMATICAL COMPUTING; POSITRON; PROBABILITY; SEMICONDUCTOR; VACUUM;

EID: 11344293133     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.165309     Document Type: Article

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