Interface defects of Al/GaAs(100) detected by Positron Annihilation Induced Auger Electron Spectroscopy (PAES)

Materials Science Forum

Volumn 363-365, Issue , 2001, Pages 621-623

  Chen, W C ^a   Fazleev, N G ^a,b   Fry, J L ^a   Weiss, A M ^a  

^a UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

^b KAZAN FEDERAL UNIVERSITY   (Russian Federation)

Author keywords

Annihilation; Auger; Defect; Interface; Metal; Positrons; Semiconductor

Indexed keywords

ALUMINUM; AUGER ELECTRON SPECTROSCOPY; CRYSTAL DEFECTS; DEPOSITION; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; ULTRATHIN FILMS;

INTERFACE DEFECTS; POSITRON ANNIHILATION;

POSITRONS;

EID: 0035005499     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.363-365.621     Document Type: Conference Paper

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