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Volumn 396, Issue 1-3, 1998, Pages 388-393

Study of the adsorption of hydrogen and oxygen on Si(100) using positron-annihilation induced Auger electron spectroscopy (PAES)

(3) Kim, J H a Yang, G a,b Weiss, A H a

a UNIVERSITY OF TEXAS AT ARLINGTON (United States)

b Samsung Corning Co Ltd (South Korea)

Author keywords

Adsorption kinetics; Electron Auger electron spectroscopy; Hydrogen; Oxygen; Positron Auger electron spectroscopy; Silicon; Solid gas interaction; Sticking coefficient

Indexed keywords

ADSORPTION; AUGER ELECTRON SPECTROSCOPY; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; OXYGEN; REACTION KINETICS; SURFACES;

SOLID GAS INTERACTION; STICKING COEFFICIENT;

SEMICONDUCTING SILICON;

EID: 0031681916 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00692-4 Document Type: Article

Times cited : (16)

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