Characteristics of ferroelectric gate transistor using Nd 2Ti2O7/HfO2/Si structures

Integrated Ferroelectrics

Volumn 64, Issue , 2004, Pages 269-276

  Kim, Woo Sik ^a   Lee, Chang K ^a   Yang, Jun Kyu ^a   Park, Hyung H ^a  

^a Yonsei University   (South Korea)

Author keywords

Ferroelectric gate field effect transistor; Interfacial properties; Nd2Ti 2O7 HfO2 Si structure

Indexed keywords

CAPACITANCE; FERROELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; MAGNETRON SPUTTERING; VOLTAGE CONTROL; X RAY DIFFRACTION;

CHEMICAL SOLUTION DEPOSITION; FERROELECTRIC-GATE FIELD-EFFECT TRANSISTORS; INTERFACIAL PROPERTIES;

GATES (TRANSISTOR);

EID: 33751162630     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490894690     Document Type: Article

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