Fine machining of large-diameter 6H-SiC wafers

Journal of Materials Science and Technology

Volumn 22, Issue 5, 2006, Pages 681-684

  Chen, Xiufang ^a   Li, Juan ^a   Ma, Deying ^a   Hu, Xiaobo ^a   Xu, Xiangang ^a   Jiang, Minhua ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

6H SiC; Chemo mechanical polishing (CMP); Roughness

Indexed keywords

CUTTING; LAPPING; MACHINING; MORPHOLOGY; RESIDUAL STRESSES; SILICON CARBIDE; SINGLE CRYSTALS; SURFACE ROUGHNESS;

6H SIC; CHEMOMECHANICAL POLISHING (CMP); CRYSTAL LATTICE PERFECTION; DEEP DAMAGE LAYER; MECHANICAL POLISHING (MP); WAFERS;

CHEMICAL MECHANICAL POLISHING;

EID: 33751096483     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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