Raman scattering as a probing method of subsurface damage in SiC

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 348-351

  Vicente, P ^a,b   David, D ^b   Camassel, J ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b SAVOIE TECHNOLAC   (France)

Author keywords

Bulk SiC; Carrier density; Subsurface damage

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL POLISHING; CRYSTAL DEFECTS; RAMAN SPECTROSCOPY; SURFACE STRUCTURE;

SUBSURFACE DAMAGE;

SILICON CARBIDE;

EID: 0035932332     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00596-1     Document Type: Article

References (12)