-
2
-
-
36549102851
-
New phase change materials for optical recording with short erase time
-
Barton R, Davis CR, Rubin K, Lim G (1986) New phase change materials for optical recording with short erase time. Appl Phys Lett 48:1255-1257
-
(1986)
Appl Phys Lett
, vol.48
, pp. 1255-1257
-
-
Barton, R.1
Davis, C.R.2
Rubin, K.3
Lim, G.4
-
6
-
-
0343661549
-
Crystallization process of Sb-Te alloy films for optical storage
-
Fujimori S, Yagi S, Yamazaki H, Funakoshi N (1988) Crystallization process of Sb-Te alloy films for optical storage. J Appl Phys 64:1000-1004
-
(1988)
J Appl Phys
, vol.64
, pp. 1000-1004
-
-
Fujimori, S.1
Yagi, S.2
Yamazaki, H.3
Funakoshi, N.4
-
7
-
-
33751076375
-
Sb-Se (Antimony-Selenium)
-
Ghosh G (1993) Sb-Se (Antimony-Selenium). J Phase Equilib 14
-
(1993)
J Phase Equilib
, pp. 14
-
-
Ghosh, G.1
-
8
-
-
0141538290
-
An edge contact type cell for phase change RAM featuring very low power consumption
-
Ha YH, Yi JH, Horii H, Park JH, Joo SH, Park SO, Chung UI, Moon JT (2003) An edge contact type cell for phase change RAM featuring very low power consumption. Symposium VLSI Tech Dig:175-176
-
(2003)
Symposium VLSI Tech Dig
, pp. 175-176
-
-
Ha, Y.H.1
Yi, J.H.2
Horii, H.3
Park, J.H.4
Joo, S.H.5
Park, S.O.6
Chung, U.I.7
Moon, J.T.8
-
9
-
-
0141830841
-
A novel cell technology using N-doped GeSbTe films for phase change RAM
-
Horii H, Yi JH, Park JH, Ha YH, Baek IG; Park SO, Hwang YN, Lee SH, Kim YT, Lee KH, Chung UI, Moon JT (2003) A novel cell technology using N-doped GeSbTe films for phase change RAM. Symposium VLSI Tech Dig:177-178
-
(2003)
Symposium VLSI Tech Dig
, pp. 177-178
-
-
Horii, H.1
Yi, J.H.2
Park, J.H.3
Ha, Y.H.4
Baek, I.G.5
Park, S.O.6
Hwang, Y.N.7
Lee, S.H.8
Kim, Y.T.9
Lee, K.H.10
Chung, U.I.11
Moon, J.T.12
-
10
-
-
2542452334
-
Proposal for a memory transistor using phase-change and nanosize effects
-
Hosaka S, Miyauchi K., Tamura T, Sone H, Koyanagi H (2004) Proposal for a memory transistor using phase-change and nanosize effects. Microelectron Eng 73-74:736-740
-
(2004)
Microelectron Eng
, vol.73-74
, pp. 736-740
-
-
Hosaka, S.1
Miyauchi, K.2
Tamura, T.3
Sone, H.4
Koyanagi, H.5
-
12
-
-
0011212758
-
5 thin films
-
5 thin films. J Appl Phys 86:6770-6772
-
(1999)
J Appl Phys
, vol.86
, pp. 6770-6772
-
-
Kim, J.H.1
-
13
-
-
0842309810
-
Current status of the phase change memory and its future
-
Lai S (2003) Current status of the phase change memory and its future. IEDM Tech Dig:255-258
-
(2003)
IEDM Tech Dig
, pp. 255-258
-
-
Lai, S.1
-
14
-
-
0035717521
-
OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications
-
Lai S, Lowrey T (2001) OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications. IEMD Tech Dig:803-806
-
(2001)
IEMD Tech Dig
, pp. 803-806
-
-
Lai, S.1
Lowrey, T.2
-
17
-
-
1042267549
-
Crystallization of germanium-antimony-tellurium amorphous thin film sandwiched between various dielectric protective films
-
Ohshima N (1996) Crystallization of germanium-antimony-tellurium amorphous thin film sandwiched between various dielectric protective films. J Appl Phys 79:8357-8363
-
(1996)
J Appl Phys
, vol.79
, pp. 8357-8363
-
-
Ohshima, N.1
-
19
-
-
0032045678
-
Double optical phase transition of GeSbTe thin films sandwiched between two SiN layers
-
Tominaga J, Nakano T, Atoda N (1998) Double optical phase transition of GeSbTe thin films sandwiched between two SiN layers. Jpn J Appl Phys 37:1852-1854
-
(1998)
Jpn J Appl Phys
, vol.37
, pp. 1852-1854
-
-
Tominaga, J.1
Nakano, T.2
Atoda, N.3
|