Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition

Journal of Luminescence

Volumn 121, Issue 2 SPEC. ISS., 2006, Pages 349-352

  Monroy, B M ^a   Santana, G ^a   Aguilar Hernandez J ^b   Benami, A ^a   Fandino J ^a   Ponce, A ^a   Contreras Puente, G ^b   Ortiz, A ^a   Alonso, J C ^a  

^a UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^b INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

Author keywords

Multilayer; PECVD; Photoluminescence; Silicon nanoclusters; Silicon nitride

Indexed keywords

HYDROGEN; MULTILAYERS; PASSIVATION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE;

EFFUSION; RED SHIFT; SILICON NANOCLUSTERS;

AMORPHOUS FILMS;

EID: 33751014022     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.08.046     Document Type: Article

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