Chapter 7 Theory of Radiative and Nonradiative Processes in Silicon Nanocrystallites

Semiconductors and Semimetals

Volumn 49, Issue C, 1997, Pages 253-301

  Delerue, C ^a   Allan, G ^a   Lannoo, M ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

NONRADIATIVE PROCESS; SILICON NANOCRYSTALLITES;

NANOCRYSTALLITES;

EID: 77956674952     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62505-3     Document Type: Article

References (96)

1. Allan G., Delerue C., and Lannoo M. Phys. Rev. Lett. 76 (1996) 2961
2. Allan G., Delerue C., Lannoo M., and Martin E. Phys. Rev. B 52 (1995) 11982
3. Allen P.B., Broughton J.Q., and McMahan A.K. Phys. Rev. B 34 (1986) 859
4. Böttcher C.J.F. Theory of Electric Polarization. 2nd edn I (1973), Elsevier, Amsterdam
5. Bourgoin J., and Lannoo M. In: Cardona M. (Ed). Point Defects in Semiconductors II (1983), Springer Verlag, New York 103
6. Brandt M.S., and Stutzmann M. Appl. Phys. Lett. 61 (1992) 2569
7. Brandt M.S., and Stutzimann M. Solid State Commun. 93 (1995) 473
8. Brus L.E. J. Chem. Phys. 79 (1983) 5566 ibid. (1984). 4403
9. Bsiesy A., Muller F., Ligeon M., Gaspard F., Herino R., Romestain R., and Vial J.C. Phys. Rev. Lett. 71 (1993) 637
10. Bsiesy A., Muller F., Mihalcescu I., Ligeon M., Gaspard F., Hérino R., Romestain R., and Vial J.C. In: Vial J.C., Canham L.T., and Lang W. (Eds). Light Emission from Silicon (1993), Elsevier, North-Holland 29 J. Limines. 57
11. Bsiesy. A., and co-workers (to be published)
12. Buda F., Kohanoff J., and Parrinello M. Phys. Rev. Lett. 69 (1992) 1272
13. Calcott P.D.J., Nash K.J., Canham L.T., Kane M.J., and Brumhead D. J. Phys. Condens. Mater. 5 (1993) L91
14. Calcott P.D.J., Nash K.J., Canham L.T., Kane M.J., and Brumhead D. In: Fauchet P.M., Tsai C.C., Canham L.T., Shiniizu I., and Aoyagi Y. (Eds). Microcrystalline Semiconducrors-Mateirals Science & Devices (1993), Materials Research Society, Pittsburgh MRS Symposia Proceedings 283
15. Canham L.T. Appl. Phys. Lett. 57 (1990) 1046
16. Chazalviel J.N., Ozanam F., and Dubin V.M. J. Phys. I France 4 (1994) 1325
17. Cullis A.G., and Canham L.T. Nature (London) 353 (1991) 335
18. Delerue C., Allan G., and Lannoo M. Phys. Rev. B 48 (1993) 11024
19. Delerue C., Lannoo M., Allan G., Martin E., Mihalescu I., Vial J.C., Romestain R., Müller F., and Bsiesy A. Phys. Rev. Lett. 75 (1995) 2228
20. Delley B., and Steigmeier E.F. Phys. Rev. B 47 (1993) 1397
21. Delley B., and Steigmeier E.F. Appl. Phys. Lett. 67 (1995) 2370
22. Dexter D.L. In: Seitz F., and Turnbull D. (Eds). Solid State Physics 6 (1958), Academic Press, New York 30
23. D Mol User Guide, version 2.3.5. San Diego: Biosyni. Technologies, 1993
24. Fauchet. P. M. (1995). Private communication
25. Fishman G., Mihalcescu I., and Romestain R. Phys. Rev. B 48 (1993) 1464
26. Fishman G., Romestain R., and Vial J.C. J. Phys. IV3 (1993) 355
27. Gavartin J.L., Matthai C.C., and Morrison I. Thin Solid Films 255 (1995) 39
28. Goguenheim D., and Lannoo M. J. Appl. Phys. 68 (1900) 1059
29. Goguenheim D., and Lannoo M. Phys. Rev. B 44 (1991) 1724
30. Henry C.H., and Lang D.V. Phys. Rev. B 15 (1977) 989
31. Hill N.A., and Whaley K.B. Phys. Rev. Lett. 75 (1995) 1130
32. Hirao M., Uda T., and Murayama Y. Mater. Res. Soc. Symp. Proc. 283 (1993) 425
33. M. Hirao (1995). In "Microcrystalline and Nanocrystalline Semiconductors" (R. W. Collins. C. C. Tsai. M. Hirose. F. Koch L. Brus). Mat. Res. Soc. Symp. Proc. 358. Materials Research Society. Pittsburgh, p. 3
34. Horry. M. A. (1995). Ph.D. thesis (University of Grenoble) and presentation at the EMRS Spring Meeting in Strasbourg. Symposium on porous silicon: material. technology and devices
35. Huaxiang F., Ling Y., and Xide X. Phys. Rev. B 48 (1993) 10978
36. Hybertsen M.S. In: Iyer S.S., Canham L.T., and Collins R.T. (Eds). Light Emission from Silicon (1992), Materials Research Society, Pittsburgh 179
37. Hybertsen M.S., and Needels M. Phys. Rev. B 48 (1993) 4608
38. Hybertsen M.S. Phys Rev. Lett. 72 (1994) 1514
39. Kanemitsu Y., Suzuki K., Uto H., Masumoto Y., Masumoto T., Kyushin S., Higushi K., and Matsumoto H. Appl. Phys. Lett. 61 (1992) 2446
40. Kanemitsu Y. Phys. Rev. B 49 (1994) 16845
41. Kauffer E., Pecheur P., and Gerl M. J. Phys. C 9 (1976) 2319
42. Koch F., Petrova-Koch V., and Muschick T. In: Vial J.C., Canham L.T., and Lang W. (Eds). Light Emission from Silicon (1993), Elsevier, North-Holland 271 J. Lumines. 57
43. Landsberg Peter T. Recombination in Semiconductors (1991), Cambridge University Press
44. Lannoo M. Phys. Rev. B 10 (1974) 2544
45. Lannoo M., and Bourgoin J. In: Cardona M. (Ed). Point Defects in Semiconductors I (1981), Springer Verlag, New York
46. Lannoo M., Delerue C., and Allan G. Phys. Rev. Lett. 74 (1995) 3415
47. Lee S.G., Cheong B.H., Lee H.K., and Chang K.J. Phys. Rev. B 51 (1995) 1762
48. Lockwood D.J. Solid State Commun. 92 (1994) 101
49. Madelung O. Semiconductors. Group IV and II-V Compounds. (1991), Springer Verlag Data in Science and Techonology
50. Martin E., Delerue C., Allan G., and Lannoo M. Phys. Rev. B 50 (1994) 18258
51. Mattheiss L.F., and Patel J.R. Phys. Rev. B 23 (1981) 5384
52. Merle J.C., Capizzi M., Firioni P., and Frova A. Phys. Rev. B 17 (1978) 4821
53. Meyer B.K., Hofmann D.M., Stadler W., Petrova-Koch V., Koch F., Omling P., and Emanuelsson P. Appl. Phys. Lett. 63 (1993) 2120
54. Mihalescu I., Vial J.C., Bsiesy A., Müller F., Romestain R., Martin E., Delerue C., Lannoo M., and Allan G. Phys. Rev. B 51 (1995) 17605
55. Mintmire J.W. J. Vac. Sci. Technol. A 11 (1993) 1733
56. Monchalin J.P., Bertrand L., Rousset G., and Lepoutre F. J. Appl. Phys. 56 (1984) 190
57. Nash K.J., Calcott P.D.J., Canham L.T., and Needs R.J. Phys. Rev. B 51 (1995) 17698
58. Ohno T., Shiraishi K., and Ogawa T. Phys. Rev. Lett. 69 (1992) 2400
59. Pasquarello A., Hybertsen M.S., and Car R. Phys. Rev. Lett. 74 (1995) 1024
60. Petit J., Allan G., and Lannoo M. Phys. Rev. B 33 (1986) 8595
61. Petit M., Lannoo M., and Allan G. Solid State Commun. 60 (1986) 861
62. Poindexter I.H., and Caplan P.J. Prog. Surf Sci. 14 (1983) 201
63. Polatoglou H.M. J. Lumines. 57 (1993) 117
64. Prokes S.M., Carlos W.E., and Bermudez V.M. Appl. Phys. Lett. 61 (1992) 1447
65. Proot J.P., Delerue C., and Allan G. Appl. Phys. Lett. 61 (1992) 1948
66. Properties of Silicon, published by INSPEC, The Institution of Electrical Engineers, EMIS Datareviews Series No. 4, 1988
67. Read A.J., Needs R.J., Nash K.J., Canham L.T., Calcott P.D.J., and Qteish A. Phys. Rev. Lett. 69 (1992) 1232 ibid.
68. Phys. Rev. Lett. 70 (1993) 2050
69. Ren S.Y., and Dow J.D. Phys. Rev. B 45 (1992) 6492
70. Robinson M.B., Dillon A.C., Haynes D.R., and George S.M. Appl. Phys. Lett. 61 (1992) 1414
71. Rosenbauer M., Finkbeiner S., Bustarret E., Weber J., and Stutzmann M. Phys. Rev. B 51 (1995) 10539
72. Sagnes I., Halimaoui A., Vincent G., and Badoz P.A. Appl. Phys. Lett. 62 (1993) 1155
73. Sanders G.D., and Chang Y.-C. Phys. Rev. B 45 (1992) 9202
74. Shik A. J. Appl. Phys. 74 (1993) 2951
75. Steigmeier E.F., Delley B., and Auderset H. Physica Scripta T45 (1992) 305
76. Suemoto T., Tanaka K., Nakajima A., and Itakura T. Phys. Rev. B 70 (1993) 3659
77. Takagahara T., and Takeda K. Phys. Rev. B 46 (1992) 15578
78. Tserbak C., Polatoglou H.M., and Theodorou G. Phys. Rev. B 47 (1993) 7104
79. Tsu R., and Babic D. In: Bensahel D.C., Canham L.T., and Ossicini S. (Eds). Optical Properties of Law Dimensional Silicon Structures (1993), Kluwer, Academic Publishers, Dordrecht 203 NATO AS1 Series
80. Tsu R., and Babic D. Appl. Phys. Lett. 64 (1994) 1806
81. Tsybeskov L., Vandyshev J.V., and Fauchet P. Phys. Rev. B 49 (1994) 7821
82. Vial J.C., Bsiesy A., Gaspard F., Hérino R., Ligeon M., Muller F., Romestain R., and Macfarlane R.M. Phys. Rev. B 45 (1992) 14171
83. J.C. Vial A. Bsiesy G. Fishman F. Gaspard, R. Hérino M. Ligeon F. Muller R. Romestain R.M. Macfarlane (1993). In Microcrystalline Semiconductors-Materials Science & Devices, p. 241
84. Vincent G., and Bois D. Solid State Commun. 27 (1978) 431
85. Vinchon T., Spanjaard D., and Desjonqueres M.C. J. Phys. C: Con. Mat. 4 (1992) 5061
86. Vogl P., Hjalmarson H.P., and Dow J. J. Phys. Chem. Solids 44 (1983) 365
87. Von Bardeleben H.J., Stievenard D., Grosman A., Ortega C., and Siejka J. Phys. Rev. B 47 (1993) 10899
88. Voos M., Uzan Ph., Delalande C., Bastard G., and Halimaoui A. Appl. Phys. Lett. 61 (1992) 1213
89. Wang L.W., and Zunger A. J. Phys. Chem. 98 (1994) 2158
90. Wang L.W., and Zunger A. Phys. Rev. B 73 (1994) 1039
91. Wilson W.L., Szajowski P.F., and Brus L.E. Science 262 (1993) 1242
92. Xie Y.H., Hybertsen M.S., Wilson W.L., Ipri S.A., Carver Brown G.E., Dons W.L.E., Weir B.E., Kortan A.R., Watson G.P., and Liddle A.J. Phys. Rev. B 50 (1994) 8138
93. Xu Z.Y., Gal M., and Gross M. Appl. Phys. Lett. 60 (1992) 1375
94. Yeh C.-Y., Zhang S.B., and Zunger A. Appl. Phys. Lett. 64 (1994) 3545
95. Yeh C.-Y., Zhang S.B., and Zunger A. Phys. Rev. B 50 (1994) 14405
96. Zheng X.L., Wang W., and Chen H.C. Appl. Phys. Lett. 60 (1992) 986