Comparison between light emission from Si/SiNX and Si/SiO 2 multilayers: Role of interface states

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 448-451

  Chen, Kunji ^a   Ma, Zhongyuan ^a   Huang, Xinfan ^a   Xu, Jun ^a   Li, Wei ^a   Sui, Yanping ^a   Mei, Jiaxin ^a   Zhu, Da ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; AMORPHOUS SILICON; DEHYDROGENATION; ELECTROLUMINESCENCE; EVAPORATION; HYDROGEN; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SPECTROPHOTOMETERS; SPUTTERING; ULTRAVIOLET RADIATION;

FULL WIDTH AT HALF-MAXIMUM (FWHM); INTERFACE STATES; NON-BONDING OXYGEN HOLE CENTERS (NBOHC); SUBLAYERS;

NANOSTRUCTURED MATERIALS;

EID: 2942564133     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.016     Document Type: Conference Paper

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