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Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 642-649

Intrinsic carbon doping of (AlGa)As for (InGa)As laser structures (λ ≈ 1.17 μm)

(5) Gottschalch, V a Leibiger, G a Benndorf, G a Herrnberger, H b Spemann, D a

a UNIVERSITY OF LEIPZIG (Germany)

b LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM (Germany)

Author keywords

A1. Carbon incorporation; A3. Metalorganic vapor phase epitaxy; B1. AlGaAs; B1. GaAs

Indexed keywords

CLADDING (COATING); CONCENTRATION (PROCESS); CRYSTAL GROWTH; CURRENT DENSITY; DIFFRACTOMETERS; ELLIPSOMETRY; HALL EFFECT; INDIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANIC COMPOUNDS; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION;

ALGAAS; CARBON INCORPORATION; GAAS; LASER STRUCTURES; SPECTROSCOPIC ELLIPSOMETRY;

ALUMINUM COMPOUNDS;

EID: 9944264939 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.111 Document Type: Conference Paper

Times cited : (3)

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