1.15 μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T0 = 210K)

Japanese journal of applied physics

Volumn 39, Issue 10 B, 2000, Pages

  Nishiyama, Nobuhiko ^a   Arai, Masakazu ^a   Shinada, Satoshi ^a   Miyamoto, Tomoyuki ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HIGH TEMPERATURE PROPERTIES; LIGHT EMISSION; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES;

LASING; VERTICAL CAVITY SURFACE EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 0034291774     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l1046     Document Type: Article

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