Method for shallow impurity characterization in ultrapure silicon using photoluminescence

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 5913-5916

  Broussell, I ^a   Stotz, J A H ^a   Thewalt, M L W ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON-ION LASER; BOUND EXCITON; CONCENTRATION RANGES; DEEP TRAPS; EXCITATION DENSITY; EXCITATION METHODS; FREE EXCITONS; IMPURITY CONCENTRATION; LASER RAMAN; LUMINESCENCE QUANTUM EFFICIENCY; ND:YLF LASER; QUANTITATIVE DETERMINATIONS; SPECTRAL REGION;

ARGON LASERS; ARSENIC; BORON; EXCITONS; PHOSPHORUS;

PHOTOLUMINESCENCE;

EID: 0037113011     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1515375     Document Type: Article

References (11)

1. M. Tajima, Appl. Phys. Lett. 32, 719 (1978). apl APPLAB 0003-6951
2. A. S. Kaminskii et al., Zh. Prikl. Spektrosk. 36, 745 (1982). zps ZPSBAX 0514-7506
3. P. McLColley and E. C. Lightowlers, Semicond. Sci. Technol. 2, 157 (1987). sst SSTEET 0268-1242
4. M. Tajima et al., J. Electrochem. Soc. 137, 3544 (1990). jes JESOAN 0013-4651
5. I. Pelant et al., J. Appl. Phys. 73, 3477 (1993). jap JAPIAU 0021-8979
6. H. Nakayama, T. Nishino, Y. Hamakawa, Jpn. J. Appl. Phys. 19, 501 (1980). jja JJAPA5 0021-4922
7. M. L. W. Thewalt, in Excitons, edited by E. I. Rashba and M. D. Sturge (North-Holland, Amsterdam, 1982), p. 393.
8. M. L. W. Thewalt and J. A. Rostworowski, Solid State Commun. 25, 991 (1978). ssc SSCOA4 0038-1098
9. M. L. W. Thewalt et al., Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), Vol. 1, p. 341.
10. M. Suezawa and K. Sumino, Phys. Status Solidi A 78, 639 (1983). psa PSSABA 0031-8965
11. R. Sauer et al., Appl. Phys. A: Mater. Sci. Process. 36, 1 (1985). apa APSFDB 0721-7250