Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

Applied Physics Letters

Volumn 89, Issue 18, 2006, Pages

  Fardin, E A ^a   Holland, A S ^a   Ghorbani, K ^a   Akdogan, E K ^b   Simon, W K ^b   Safari, A ^b   Wang, J Y ^c  

^a RMIT UNIVERSITY   (Australia)

^b Piscataway   (United States)

^c SWINBURNE UNIVERSITY OF TECHNOLOGY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM ALLOYS; CAPACITANCE MEASUREMENT; DIELECTRIC PROPERTIES; FILM GROWTH; Q FACTOR MEASUREMENT; STRAIN MEASUREMENT; THIN FILMS;

CAPACITANCE TUNABILITY; COMPRESSIVE STRAIN; INTERDIGITAL CAPACITOR METHODS;

POLYCRYSTALLINE MATERIALS;

EID: 33750730275     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2374810     Document Type: Article

References (23)

1. H. Xu, N. K. Pervez, P. J. Hansen, L. Chen, S. Keller, U. K. Mishra, and R. A. York, IEEE Electron Device Lett. 25, 49 (2004).
2. H. Li, J. Finder, Y. Liang, R. Gregory, and W. Qin, Appl. Phys. Lett. 87, 072905 (2005).
3. D. Ghosh, B. Laughlin, J. Nath, A. I. Kingon, M. B. Steer, and J.-P. Maria, Thin Solid Films 496, 669 (2006).
4. S. R. Summerfelt, D. Kotecki, A. Kingon, and H. N. Al-Shareef, Mater. Res. Soc. Symp. Proc. 361, 257 (1995).
5. E. A. Fardin, A. S. Holland, and K. Ghorbani, Appl. Phys. Lett. 89, 022901 (2006).
6. S. Cristoloveanu, Rep. Prog. Phys. 50, 327 (1987).
7. R. A. Johnson, P. R. de la Houssaye, C. E. Chang, P.-F. Chen, M. E. Wood, G. A. Garcia, I. Lagnado, and P. M. Asbeck, IEEE Trans. Electron Devices 45, 1047 (1998).
8. E. K. Hollmann, V. I. Gol'drin, V. E. Loginov, A. M. Prudan, and A. V. Zemtsov, Tech. Phys. Lett. 25, 549 (1999).
9. G. Bhakdisongkhram, Y. Yamashita, T. Nishida, and T. Shiosaki, Jpn. J. Appl. Phys., Part 1 44, 7098 (2005).
10. J. A. Bellotti, Ph.D. thesis, Rutgers-The State University of New Jersey, 2003.
11. J. A. Bellotti, E. K. Akdogan, A. Safari, W. Chang, and S. K. Kirchoefer, Integr. Ferroelectr. 49, 113 (2002).
12. J. Bellotti, E. K. Akdogan, and A. Safari, Ferroelectrics 271, 131 (2002).
13. W. K. Simon, E. K. Akdogan, A. Safari, and J. A. Bellotti, Appl. Phys. Lett. 87, 082906 (2005).
14. W. K. Simon, E. K. Akdogan, and A. Safari, Appl. Phys. Lett. 89, 022902 (2006).
15. W. K. Simon, E. K. Akdogan, and A. Safari, J. Appl. Phys. 97, 103530 (2005).
16. Z.-G. Ban and S. P. Alpay, J. Appl. Phys. 93, 504 (2003).
17. T. M. Shaw, Z. Suo, M. Huang, E. Liniger, R. B. Laibowitz, and J. D. Baniecki, Appl. Phys. Lett. 75, 2129 (1999).
18. I. C. Noyan and J. B. Cohen, Residual Stress (Springer, Berlin, 1987), p. 122.
19. B. M. Clemens and J. A. Bain, Mater. Res. Bull. 17, 46 (1992).
20. Z.-G. Ban and S. P. Alpay, J. Appl. Phys. 91, 9288 (2002).
21. B. Acikel, Ph.D. dissertation, University of California at Santa Barbara, 2002.
22. S. S. Gevorgian, T. Martinsson, P. L. J. Linńr, and E. L. Kollberg, IEEE Trans. Microwave Theory Tech. 44, 896 (1996).
23. J. S. Speck and W. Pompe, J. Appl. Phys. 76, 466 (1994).