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Volumn 253, Issue 1 SPEC. ISS., 2006, Pages 287-291
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An optical study of the correlation between growth kinetics and microstructure of μc-Si grown by SiH 4 -H 2 PECVD
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Author keywords
Ellipsometry; PECVD; Raman spectroscopy; c Si
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Indexed keywords
ELLIPSOMETRY;
GROWTH KINETICS;
MICROSTRUCTURE;
NUCLEATION;
OPTICAL CORRELATION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
RAMAN SPECTROSCOPY;
CRYSTALLITE NUCLEATION;
LASER REFLECTANCE INTERFEROMETRY;
SPECTROSCOPIC ELLIPSOMETRY (SE);
SEMICONDUCTING SILICON;
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EID: 33750581348
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2006.05.094 Document Type: Article |
Times cited : (10)
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References (22)
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