SCOPUS 정보 검색 플랫폼

Volumn 395, Issue 1-2, 2001, Pages 105-111

Amorphous and microcrystalline silicon deposited by hot-wire chemical vapor deposition at low substrate temperatures: Application to devices and thin-film microelectromechanical systems

(5) Conde, J P a Alpuim, P b Boucinha, M b Gaspar, J b Chu, V b

a INSTITUTO SUPERIOR TÉCNICO (Portugal)

b INESC (Portugal)

Author keywords

Hot wire CVD; Low substrate temperature; Silicon; Thin film microelectromechanical systems

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRENGTH; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY; GLASS; MICROELECTROMECHANICAL DEVICES; OPTOELECTRONIC DEVICES; POLYETHYLENE TEREPHTHALATES; RESIDUAL STRESSES; SEMICONDUCTOR DOPING; SUBSTRATES; SURFACE STRUCTURE;

HOT-WIRE CHEMICAL VAPOR DEPOSITION (HWCVD);

THIN FILMS;

EID: 0035800980 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01222-6 Document Type: Conference Paper

Times cited : (21)

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