Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures

Journal of Applied Physics

Volumn 100, Issue 8, 2006, Pages

  Gurioli, M ^a   Zamfirescu, M ^a   Vinattieri, A ^a   Sanguinetti, S ^b   Grilli, E ^b   Guzzi, M ^b   Mazzucato, S ^c   Polimeni, A ^c   Capizzi, M ^c   Seravalli, L ^d   Frigeri, P ^d   Franchi, S ^d  

^a UNIVERSITY OF FLORENCE   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c UNIVERSITÀ DI ROMA LA SAPIENZA   (Italy)

^d IMEM CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; PASSIVATION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CARRIER RELAXATION; HYDROGEN INCORPORATION; RADIATIVE EFFICIENCY; RECOMBINATION EFFICIENCIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33750523694     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2358397     Document Type: Article

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