Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 334-338

  Saint Girons, G ^a   Lemaitre A ^a   Navarro Paredes, V ^a,c   Patriarche, G ^a   Rao, E V K ^a   Sagnes, I ^a   Theys, B ^b  

^a CNRS   (France)

^b INSTITUT DES NANOSCIENCES DE PARIS   (France)

^c INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

A1. Defects; A1. Nanostructures; A3. Metalorganic vapor phase epitaxy

Indexed keywords

CRYSTAL DEFECTS; HYDROGENATION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

INTRINSIC PROPERTIES; NON-RADIATIVE CHANNELS;

NANOSTRUCTURED MATERIALS;

EID: 1342327958     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.01.017     Document Type: Article

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