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Volumn 86, Issue 1, 1999, Pages 209-213
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Near edge X-ray absorption fine structure characterization of polycrystalline GaN grown by nitridation of GaAs (001)
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION SPECTROSCOPY;
ANISOTROPY;
CRYSTAL MICROSTRUCTURE;
ELECTROMAGNETIC WAVE POLARIZATION;
MOLECULAR BEAM EPITAXY;
MONOCHROMATORS;
PHASE COMPOSITION;
POLYCRYSTALLINE MATERIALS;
SENSITIVITY ANALYSIS;
SUBSTRATES;
SYNCHROTRON RADIATION;
THIN FILMS;
CONSTANT LENGTH ROWLAND CIRCLE MONOCHROMATORS (CL-RCM);
NEAR EDGE X-RAY ABSORPTION FINE STRUCTURE (NEXAFS) SPECTROSCOPY;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0032607023
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.370791 Document Type: Article |
Times cited : (18)
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References (18)
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