Recent results from epitaxial growth on step free 4H-SiC mesas

Materials Research Society Symposium Proceedings

Volumn 911, Issue , 2006, Pages 85-94

  Neudeck, Philip G ^a   Trunek, Andrew J ^a   Spry, David J ^a   Powell, J Anthony ^a   Du, Hui ^b   Skowronski, Marek ^b   Bassim, Nabil D ^c   Mastro, Michael A ^c   Twigg, Mark E ^c   Holm, Ronald T ^c   Henry, Richard L ^c   Eddy Jr , Charles R ^c  

^a NASA GLENN RESEARCH CENTER   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LATTICE CONSTANTS; RELAXATION PROCESSES; SINGLE CRYSTALS;

DEFECT STRUCTURE; DISLOCATION ARRAYS; FILM THICKNESS; HETEROEPILAYERS; SURFACE POLARITY;

SILICON CARBIDE;

EID: 33750377993     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0911-b08-03     Document Type: Conference Paper

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