Hall effect sensors integrated in standard technology and optimized with on-chip circuitry

EPJ Applied Physics

Volumn 36, Issue 1, 2006, Pages 49-64

  Kammerer, J B ^a   Hebrard L ^a   Frick, V ^a   Poure, P ^b   Braun, F ^a  

^a Faculté de Médecine   (France)

^b INSTITUT JEAN LAMOUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; HALL EFFECT; MAGNETOMETERS; SENSITIVITY ANALYSIS; SILICON;

ON-CHIP CIRCUITRY; SILICON HALL DEVICES; SPINNING-CURRENT METHOD;

OPTICAL SENSORS;

EID: 33750300831     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2006100     Document Type: Article

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