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International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 199-202

Statistical fluctuation analysis by Monte Carlo ion implantation method

(6) Oda, Y a Ohkura, Y a Suzuki, K a Ito, S a Amakawa, H a Nishi, K a

a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

Author keywords

Analytical models; Computational modeling; Doping profiles; Fluctuations; Implants; Ion implantation; Monte Carlo methods; MOSFETs; Semiconductor process modeling; Threshold voltage

Indexed keywords

ANALYTICAL MODELS; DENTAL PROSTHESES; ION IMPLANTATION; IONS; MOSFET DEVICES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; STATISTICAL MECHANICS; THRESHOLD VOLTAGE;

COMPUTATIONAL MODEL; DOPING PROFILES; FLUCTUATIONS; MOSFETS; SEMICONDUCTOR PROCESS MODELING;

MONTE CARLO METHODS;

EID: 33750298878 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/SISPAD.2002.1034551 Document Type: Conference Paper

Times cited : (4)

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