Study on growth and properties of novel γ-LiAlO2 substrate

Science in China, Series E: Technological Sciences

Volumn 49, Issue 2, 2006, Pages 188-193

  Zou, Jun ^a,b   Zhou, Shengming ^a   Xu, Jun ^a   Zhang, Rong ^c  

^a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c NANJING UNIVERSITY   (China)

Author keywords

LiAlO2 crystal; Absorption spectra; Scanning electron micrograph (SEM)

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CRYSTAL GROWTH; LITHIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; THERMAL GRADIENTS;

ABSORPTION PEAK; LIALO2 CRYSTALS; TEMPERATURE GRADIENT TECHNIQUE; WAFERS;

SINGLE CRYSTALS;

EID: 33750180709     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1007/s11431-006-0188-1     Document Type: Article

References (16)

1. Liu, L., Edgar, J. H., Substrates for gallium nitride epitaxy, Mater. Sci. Eng., 2002, R37: 61-127.
2. Bernadini, F., Fiorentini, V., Vanderbilt, D., Spontaneous polarization and piezoelectric constance of III-V nitride, Phys. Rev. B, 1997, 56: R10024-10026.
3. 1-xN quantum wells, Phys. Rev. B, 1998, 57: R9435-9440.
4. Deguchi, T., Sekiguchi, K., Nakamura, A. et al., Quantum-confined stark effect in an AlGaN/GaN/AlGaN single quantum well structure, Jpn. J. Appl. Phys, 1999, 38(Part 2): L914-917.
5. 2 single crystal: A novel substrate for GaN epitaxy, J. Cryst. Growth, 1998, 193: 127-132.
6. Lu, M., Yang, H., LI, Z. L. et al., Dopant effects on defects in GaN films grown by metal-organic chemical vapour deposition, Chin. Phys. Lett., 2003, 20: 1552 -1557.
7. Waltereit, P., Brandt, O., Trampert, A. et al., Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes, Nature, 2000,406: 865-867.
8. 2 substrates, J. Cryst. Growth, 2005, 274: 14-20.
9. Haskell, A. B., Baker, J. T., Mclaurin, B. M. et al., Defect reduction in (100) m-plane gallium nitride via lateral epitarial overgrowth by hydride vapor phase epitaxy, Appl. Phys. Lett., 2005, 86: 111917-111925.
10. 2 (100): Nitride semiconductors free of internal electrostatic fields, J. Crystal Growth, 2001, 227-228: 437-441.
11. Waltereit, P., Brandt, O., Ramsteiner, M. et al., Growth of M-plane GaN: A way to evade electrical polarization in nitrides, Phys. Stat. Solidi, 2000, 180: 133-138.
12. 2 (100), J. Cryst. Growth, 2000, 218: 143-148.
13. Yu, Q. X., Xu, B., Wu, Q. H. et al., Growth of ZnO thin films on lattice-matched substrates by pulsed-laser deposition, Chin. Phys. Lett., 2003, 20: 2235-2240.
14. 2, J. Crystal Growth, 1981, 54: 546-550.
15. Holmam, R. L., In Processing of Crystalline Cemaics (eds. Palmour, Davis, R. F., Hare, T. M.), London: 1998, 343-348.
16. Zhao, G., Si, J., Xu, X. et al., Growth of large-sized Yb:YAG single crystal by temperature gradient technique, J. Cryst. Growth, 2003, 252: 355-360.